Surface study and thickness control of thin Al2O3 film on Cu–9%Al(111) single crystal
Surface study and thickness control of thin Al2O3 film on Cu–9%Al(111) single crystal
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Cu-9%Al(111)单晶上Al2O3薄膜的表面研究及厚度控制
DOI：
10.1016/j.apsusc.2004.06.096
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发表时间：
2004
影响因子：
6.7
通讯作者：
Weijie Song
中科院分区：
文献类型：
--
作者：
Y. Yamauchi;M. Yoshitake;Weijie Song
采用改进的清洗工艺、低离子能量和短时间溅射技术，在Cu-9%Al（111）表面成功地生长了均匀平整的Al 2 O3薄膜。利用俄歇电子能谱（AES）和扫描电子显微镜（SEM）研究了Al 2 O3在Cu-9%Al表面的生长。在Cu-9%Al合金表面均匀生长了最大厚度约4.0nm的Al_2O_3薄膜。Al 2 O3薄膜的Al和O KLL俄歇峰向低动能方向移动，这种移动与Al 2 O3/Cu-9%Al界面处肖特基势垒的形成和能带弯曲有关。Cu-9%Al表面Al 2 O3膜的厚度受氧暴露量的控制。
We were successful in growing a uniform flat Al2O3film on the Cu–9%Al(111) surface using the improved cleaning process, low ion energy and short time sputtering. The growth of ultra-thin film of Al2O3on Cu–9%Al was investigated using Auger electron spectroscopy (AES) and a scanning electron microscope (SEM). The Al2O3film whose maximum thickness was about 4.0nm grew uniformly on the Cu–9%Al surface. The Al and O KLL Auger peaks of Al2O3film shifted toward low kinetic energy, and the shifts were related to Schottky barrier formation and band bending at the Al2O3/Cu–9%Al interface. The thickness of Al2O3film on the Cu–9%Al surface was controlled by the oxygen exposure.