Light-emission mechanism of Si-MOS tunnel junctions.
Light-emission mechanism of Si-MOS tunnel junctions.
复制标题
Si-MOS隧道结的发光机制。
DOI：
10.1103/physrevb.51.2229
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Ushioda
中科院分区：
文献类型：
--
作者：
Uehara;Watanabe;Fujikawa;Ushioda
研究了Si-MOS（金属氧化物半导体）结的发光机理。利用成熟的Si加工技术，制备了具有极光滑界面的Si/ sio2 /金属（Al或Au） MOS结。观测到的发光光谱可以用发光隧道结的电流涨落理论来解释[B]。Laks和DL Mills，物理学家。[j].科学通报，2002,(2):1 - 4。光发射有两种通道：隧道电流波动引起的直接发射和隧道电流波动引起的表面等离子激元极化子散射（由表面粗糙度引起）引起的间接发射。来自Si/ sio2 /Al结的光主要来自波动电流的直接发射。从Si/ sio2 /Au结发出的光包含了强度大致相等的直接和间接发射。直接发射和间接发射在我们的结中具有相当的强度，因为我们的硅基结非常光滑，间接发射比早期研究中使用的结弱得多。
The light-emission mechanism of Si-MOS (metal-oxide-semiconductor) junctions has been investigated. Si/SiO 2/metal (Al or Au) MOS junctions with extremely smooth interfaces were fabricated by taking advantage of the well-developed Si processing technology. The observed light-emission spectra can be accounted for by the current fluctuation theory of light-emitting tunnel junctions [B. Laks and DL Mills, Phys. Rev. B 20, 4962 (1979)]. There are two channels of light emission: the direct emission from the fluctuation of the tunneling current and the indirect emission that arises from the scattering (by surface roughness) of surface-plasmon polaritons generated by the fluctuating tunnel current. The light from the Si/SiO 2/Al junction arises mainly from the direct emission from the fluctuating current. The light from the Si/SiO 2/Au junction contains both the direct and indirect emissions with approximately equal strengths. The direct and indirect emissions have comparable strength in our junctions, because our Si-based junctions are extremely smooth and the indirect emission is much weaker than in the junctions used in earlier studies.