In situ study of the growth kinetics of individual island electrodeposition of copper
In situ study of the growth kinetics of individual island electrodeposition of copper
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DOI：
10.1021/jp057549a
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发表时间：
2006-04-20
影响因子：
3.3
通讯作者：
Searson, PC
中科院分区：
文献类型：
--
作者：
Radisic, A;Ross, FM;Searson, PC
用原位透射电子显微镜研究了铜电沉积过程中单个岛的生长动力学。我们表明，足够大的过电位，生长动力学的方法，预计半球形岛屿，其特征在于由两个不同的制度的扩散限制生长的速率定律。在短时间内，岛的生长指数为0.5，如预期的扩散限制生长的非耦合半球形岛屿，而在较长的时间，生长指数接近1/6，如预期的平面扩散到不断增长的岛屿。这些结果提供了在电化学沉积过程中的单个岛屿的生长的第一个直接测量。然而，定量比较率定律表明，岛半径小于预测和岛密度远大于预测，不包括的过程，我们认为，这是与吸附原子的形成和表面扩散。在传统的增长模式中。
The growth kinetics for individual islands during electrodeposition of copper have been studied using in situ transmission electron microscopy. We show that for sufficiently large overpotentials, the growth kinetics approach the rate laws expected for diffusion-limited growth of hemispherical islands, characterized by two distinct regimes. At short times, the island growth exponent is 0.5 as expected for diffusion-limited growth of uncoupled hemispherical islands, while at longer times, the growth exponent approaches 1/6 as expected for planar diffusion to the growing islands. These results provide the first direct measurements of the growth of individual islands during electrochemical deposition. However, quantitative comparison with rate laws shows that the island radii are smaller than predicted and the island densities are much larger than predicted, processes which are not included and we suggest that this is related to adatom formation and surface diffusion. in conventional growth models.