Fabrication and contacting of single Bi nanowires
Fabrication and contacting of single Bi nanowires
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DOI：
10.1088/0957-4484/15/4/015
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发表时间：
2004-04-01
期刊：
影响因子：
3.5
通讯作者：
Neumann, R
中科院分区：
文献类型：
--
作者：
Toimil-Molares, ME;Chtanko, N;Neumann, R
直径在80和500 nm之间的铋纳米线在蚀刻的单孔膜中电化学制造。通过在膜的两侧上的两个宏观平面电极，单个纳米线成功地与仅几欧姆的接触电阻接触。接触的方法提出和测量的电阻与直径的行为的Bi纳米线进行了讨论，同时考虑电子散射在线表面和在晶界。由于线保持嵌入在膜中，因此避免了光刻工艺和线直接暴露于空气。(Some本文中的数字只在电子版中以彩色显示）。
Bismuth nanowires with diameters between 80 and 500 nm are electrochemically fabricated in etched single-pore membranes. By means of two macroscopic planar electrodes on either side of the membrane, single nanowires are successfully contacted with contact resistances of only several ohms. The contacting method is presented and the measured resistance-versus-diameter behaviour of Bi nanowires is discussed, considering both electron scattering at the wire surface and that at the grain boundaries. Since the wires remain embedded in the membrane, lithographic processes and direct exposure of the wires to air are avoided.(Some figures in this article are in colour only in the electronic version).