A collective theory of lock-on in photoconductive semiconductor switches
A collective theory of lock-on in photoconductive semiconductor switches
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DOI：
10.1109/ppc.2003.1277725
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发表时间：
2003-06
期刊：
影响因子：
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通讯作者：
K. Kambour;H. Hjalmarson;C. Myles
中科院分区：
文献类型：
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作者：
K. Kambour;H. Hjalmarson;C. Myles
集体碰撞电离已被开发来解释锁定，光触发，发生在GaAs光电导半导体开关（PCSS）的电击穿。集体碰撞电离的基本原理是，在高载流子密度下，载流子-载流子相互作用通过增加具有高于碰撞电离阈值的能量的载流子的数量来增加碰撞电离概率。在本文中，我们描述了一个速率方程的方法，集体碰撞电离的基础上，导致绝缘和半导体材料的电击穿的新见解。在这种方法中，通过碰撞电离和俄歇复合的载流子生成之间的竞争导致载流子生成速率的稳态解，并且对于给定的电场，这些稳态解的可达性决定击穿是否发生。这种方法导致不仅管芯锁定场的理论定义，但也固有的击穿场。GaAs，InP和Si使用麦克斯韦近似和系综蒙特卡罗方法计算的载流子分布函数得到的结果将被讨论。
Collective impact ionization has been developed to explain lock-on, an optically-triggered, electrical breakdown that occurs in GaAs photoconductive semiconductor switches (PCSSs). The basic principle of collective impact ionization is that, at high carrier density, carrier-carrier interactions increase the impact ionization probability by increasing the number of carriers with energies above the impact ionization threshold. In this paper, we describe a rate equation approach, based on collective impact ionization, that leads to new insights about electrical breakdown in insulating and semiconducting materials. In this approach, the competition between carrier generation through impact ionization and Auger recombination leads to steady state solutions for the carrier generation rate, and it is the accessibility of these steady state solutions, for a given electrical field, that governs whether breakdown does or does not occur. This approach leads to theoretical definitions for not only die lock-on field but also the intrinsic breakdown field. Results obtained for GaAs, InP, and Si using a carrier distribution function calculated by both a Maxwellian approximation and an ensemble Monte Carlo method will be discussed.