Focused ion beam high Tc superconductor dc SQUIDs
Focused ion beam high Tc superconductor dc SQUIDs
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聚焦离子束高温超导直流 SQUID
DOI：
10.1063/1.105976
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发表时间：
1991
影响因子：
4
通讯作者：
R. Davidheiser
中科院分区：
文献类型：
--
作者：
M. Zani;J. Luine;R. Simon;R. Davidheiser
光离子辐照可以可控地降低高温超导薄膜的临界电流密度。本文报道的是ErBa 2Cu 3 O 7薄膜图案化成微桥直流超导量子干涉器件（SQUID）结构并用直径为70 nm的光栅高能聚焦离子束辐照的行为。在46 K时，SQUID的临界电流调制率可达51%.具有适当临界电流的微桥表现出约瑟夫森样行为，其形式为在微波辐射下出现的定义明确的夏皮罗台阶。这些微桥的IcRn产物通常为几毫伏，其正常状态电阻的温度依赖性与通过金属丝的传导一致。
Light‐ion irradiation can controllably reduce the critical current density of high‐temperature superconductor thin films. Reported here is the behavior of ErBa2Cu3O7 films patterned into microbridge dc superconducting quantum interference device (SQUID) structures and irradiated with a rastered high‐energy focused ion beam of 70 nm diameter. The resultant SQUIDs have demonstrated up to 51% critical current modulation at 46 K. Microbridges with appropriate critical currents manifest Josephson‐like behavior in the form of well‐defined Shapiro steps appearing with microwave radiation. The IcRn products of these microbridges are typically a few millivolts and the temperature dependence of their normal‐state resistance is consistent with conduction through metallic filaments.