Field emission from well-aligned, patterned, carbon nanotube emitters
Field emission from well-aligned, patterned, carbon nanotube emitters
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DOI:
10.1063/1.126164
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发表时间:
2000-03-27
影响因子:
4
通讯作者:
Yamakawa, H
中科院分区:
文献类型:
--
作者:
Murakami, H;Hirakawa, M;Yamakawa, H
We have developed a process to fabricate well-aligned, patterned, carbon nanotube field emitters on glass substrates. The process consists of depositing and patterning a nickel-based metal line on the glass substrate followed by a bias-enhanced microwave plasma chemical vapor deposition to grow carbon nanotube emitters. A turn-on field of 1.2 V/mu m, and emission currents of 1 mA/cm(2) at 3 V/mu m were achieved on well-aligned carbon nanotube emitters. A test of cathode-ray tube lighting elements now underway suggests a lifetime of exceeding 10 000 h. (C) 2000 American Institute of Physics. [S0003-6951(00)03713-X].