Antiferroelectricity in Oxides: A Reexamination
Antiferroelectricity in Oxides: A Reexamination
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DOI：
10.1002/9783527654864.ch7
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发表时间：
2013-07
影响因子：
11.1
通讯作者：
K. Rabe
中科院分区：
文献类型：
--
作者：
K. Rabe
综述了反铁电氧化物的基本物理和性质。首先，在制定一个精确的定义反铁电性的困难进行了讨论，借鉴以前的文献中的讨论。我们得出以下定义：反铁电体就像铁电体一样，其结构是通过非极性高对称性参考相的畸变获得的;对于铁电体，畸变是极性的，而对于反铁电体，畸变是非极性的。然而，并不是所有的非极性相，从而获得反铁电：此外，必须有一个替代的低能量铁电相获得的极性扭曲相同的高对称性的参考结构，和一个外加电场必须诱导一个第一级过渡从反铁电相到这个铁电相，产生一个特征的P-E双磁滞回线。为了分析反铁电体的特性，我们使用了朗道理论泛函。宏观行为的微观起源进行了研究。这对于具有明确定义的可重定向局部偶极实体的系统来说是相当简单的，例如反铁电液晶和氢键反铁电，这些系统在本文中没有详细讨论。主要的重点是在反铁电氧化物的微妙的情况下，模型的基础上，适应晶格模式被证明是有用的。反铁电氧化物的具体例子与可用的第一原理的结果和讨论的组成调整在生产反铁电性的作用，和电场诱导的铁电相的性质。在薄膜和超晶格中，通过应变和有限尺寸的影响可以进行额外的调谐。文章最后对反铁电材料的设计，包括与反铁电材料的技术应用相关的性能优化进行了评述。
The fundamental physics of antiferroelectric oxides and their properties are reviewed. First, the difficulties in formulating a precise definition of antiferroelectricity are discussed, drawing on previous discussion in the literature. We arrive at the following definition: an antiferroelectric is like a ferroelectric in that its structure is obtained through distortion of a nonpolar high-symmetry reference phase; for ferroelectrics, the distortion is polar, while for antiferroelectrics it is nonpolar. However, not all nonpolar phases thus obtained are antiferroelectric: in addition, there must be an alternative low-energy ferroelectric phase obtained by a polar distortion of the same high-symmetry reference structure, and an applied electric field must induce a first-order transition from the antiferroelectric phase to this ferroelectric phase, producing a characteristic P-E double-hysteresis loop. For analysis of the characteristic properties of antiferroelectrics, we use Landau theory functionals. The microscopic origins of the macroscopic behavior are examined. This is fairly straightforward for systems with clearly-defined reorientable local-dipolar entities, such as antiferroelectric liquid crystals and hydrogen-bonded antiferroelecrics, and these systems are not discussed in any detail in this article. The main focus is on the subtler case of antiferroelectric oxides, for which models based on symmetry-adapted lattice modes prove to be useful. Specific examples of antiferroelectric oxides are presented with available first principles results and discussion of the role of compositional tuning in producing antiferroelectricity, and the nature of the electric-field-induced ferroelectric phases. In thin films and superlattices, additional tuning is possible through the effects of strain and finite size. The article concludes with some remarks on materials design, including the optimization of properties relevant to technological applications of antiferroelectrics.