Integrated Circuits and Logic Operations Based on Single-Layer MoS2
Integrated Circuits and Logic Operations Based on Single-Layer MoS2
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DOI：
10.1021/nn203715c
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发表时间：
2011-12-01
期刊：
影响因子：
17.1
通讯作者：
Kis, Andras
中科院分区：
文献类型：
--
作者：
Radisavljevic, Branimir;Whitwick, Michael Brian;Kis, Andras
逻辑电路和放大电信号的能力形成了电子器件的功能支柱，沿着有可能在同一芯片上集成多个元件。电子电路的小型化预计在不久的将来将达到根本的极限。二维材料如单层MoS2代表了垂直维度小型化的极限，作为低功率纳米电子器件的构建块是有趣的，并且由于其平面几何形状而适合于集成。由于它们的厚度小于1 nm，晶体管中的2D材料也可以减少短沟道效应，从而制造出更小、更节能的晶体管。在这里，我们报告的第一个集成电路的基础上的二维半导体MoS2。我们的集成电路能够作为逆变器工作，将逻辑“1”转换为逻辑“0”，室温电压增益高于1，使其适合集成到数字电路中。我们还表明，由单层二硫化钼晶体管组成的电路能够执行NOR逻辑运算，从该基础上可以推导出所有的逻辑运算和全数字功能。
Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS2 represent the ultimate limit of miniaturization in the vertical dimension, are Interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS2. Our Integrated circuits are capable of operating as Inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS2 transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.