Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer
Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer
复制标题
DOI：
10.1143/jjap.45.l1057
复制
发表时间：
2006-10-01
期刊：
影响因子：
--
通讯作者：
Ohno, Hideo
中科院分区：
文献类型：
--
作者：
Hayakawa, Jun;Ikeda, Shoji;Ohno, Hideo
我们报告了电流感生磁化翻转中的本征临界电流密度（J（c 0））和热稳定因子（E/k（B）T，其中E、k（B）和T是势能、玻尔兹曼常数和温度，分别）在具有Co 40 Fe 40 B20（2纳米）/Ru（0.7-2.4纳米）/Co 40 Fe 40 B20（2纳米）合成铁磁（SyF）自由层的MgO基磁性隧道结中。我们表明，J（c 0）和E/k（B）T可以通过分析的平均临界电流密度作为一个函数的磁化率使用Slonczewski的模型，考虑到热波动。我们发现，在SyF自由层中，两个CoFe B层之间的高反铁磁耦合导致J（c 0）降低，而不降低高E/k（B）T。
We report the intrinsic critical current density (J(c0)) in current-induced magnetization switching and the thermal stability factor (E/k(B)T, where E, k(B), and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2 nm)/Ru(0.7-2.4 nm)/Co40Fe40B20(2 nm) synthetic ferrimagnetic (SyF) free layer. We show that J(c0) and E/k(B)T can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski's model taking into account thermal fluctuation. We find that high antiferromagnetic coupling between the two CoFeB layers in a SyF free layer results in reduced J(c0) without reducing high E/k(B)T.