Amorphous silicon nitride deposited by hot-wire chemical vapor deposition
Amorphous silicon nitride deposited by hot-wire chemical vapor deposition
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热丝化学气相沉积非晶氮化硅
DOI：
10.1063/1.1775046
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发表时间：
2004
影响因子：
3.2
通讯作者：
Shulin Wang
中科院分区：
文献类型：
--
作者：
Fengzhen Liu;S. Ward;L. Gedvilas;B. Keyes;B. To;Qi Wang;E. Sanchez;Shulin Wang
采用SiH4、NH3和H2气体，通过热线化学气相沉积法制备了高质量的非晶氮化硅。这些薄膜显示出5A scins的高沉积速率、300°C的低处理温度、优异的共形覆盖、7A scinmin的低蚀刻速率、2.1的折射率、4.0eV的光学带隙和3MV scincm的高击穿场。研究了氢气稀释、衬底温度、腔室压力和灯丝温度对氮化硅薄膜性能的影响，优化了工艺。我们发现，添加氢气的处理显着提高氮化硅薄膜的性能。基于红外测量，膜中的N含量显著增加。氢稀释被认为对共形氮化硅膜起关键作用。氢气稀释也改善了该过程，因为在H2气体的帮助下，NH3、SiH4的气体比例大大降低。随着衬底温度从23°到400 °C变化，这是...
High-quality amorphous silicon nitrides were deposited by hot-wire chemical vapor deposition using SiH4, NH3, and H2 gases. These films show a high deposition rate of 5A∕s, a low processing temperature of 300°C, an excellent conformal coverage, a low etching rate of 7A∕min, an index of refraction of 2.1, an optical band gap of 4.0eV, and a high breakdown field of 3MV∕cm. The effects of hydrogen dilution, substrate temperature, chamber pressure, and filament temperature on silicon nitride film property were studied to optimize the process. We found that adding H2 to the processing significantly enhances the silicon nitride films’ properties. The N content in the film increased significantly based on the infrared measurement. Hydrogen dilution is believed to play a key role for the conformal silicon nitride film. Hydrogen dilution also improves the process in that the gas ratio of NH3∕SiH4 has been greatly reduced with the assistance of the H2 gas. With substrate temperatures varying from 23°to400°C, this s...