InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
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DOI：
10.1063/1.2388049
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发表时间：
2006-11-13
影响因子：
4
通讯作者：
Salamo, G. J.
中科院分区：
文献类型：
--
作者：
Lee, J. H.;Wang, Zh. M.;Salamo, G. J.
研究了几种独特的自组装InGaAs量子点分子。QDM自组装周围的纳米尺度尺寸的GaAs丘状模板通过液滴同质外延制造。取决于特定的InAs单层覆盖，每个GaAs丘的QD的数量范围从2到6（双QDM到六QDM）。从土丘的Ga的贡献进行了分析，在确定的QDM的形态，相对于InAs的覆盖范围在0.8和2.4 ML之间。光学表征表明，所得纳米结构是高质量的纳米晶体。(c)2006年，美国物理学会。
Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals. (c) 2006 American Institute of Physics.