Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 μm:: Fabrication and characterization
Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 μm:: Fabrication and characterization
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DOI：
10.1063/1.2952193
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发表时间：
2008-06-23
影响因子：
4
通讯作者：
Rendina, Ivo
中科院分区：
文献类型：
--
作者：
Casalino, M.;Sirleto, L.;Rendina, Ivo
在本文中，报告了完全硅兼容且在 1.55 μm 下工作的谐振腔增强 (RCE) 光电探测器的实现和表征。该探测器是采用肖特基二极管的RCE结构，其工作原理基于内部光电发射效应。利用在高反射率布拉格镜上馈电的 Cu/Si 肖特基二极管，实验证明了 1.55 μm 响应率的改善。 (C) 2008 年美国物理研究所。
In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55 mu m, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu/Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55 mu m is experimentally demonstrated. (C) 2008 American Institute of Physics.