Effects of high-κ (HfO2) gate dielectrics in double-gate and cylindrical-nanowire FETs scaled to the ultimate technology nodes
Effects of high-κ (HfO2) gate dielectrics in double-gate and cylindrical-nanowire FETs scaled to the ultimate technology nodes
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DOI：
10.1109/tnano.2006.888547
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发表时间：
2007-01-01
影响因子：
2.4
通讯作者：
Baccarani, Giorgio
中科院分区：
文献类型：
--
作者：
Gnani, Elena;Reggiani, Susanna;Baccarani, Giorgio
在这项工作中，我们研究了具有高kappa栅极介质的双栅和圆柱形纳米线场效应管在其极端小型化极限下的性能。该模型充分考虑了量子静电；通过改进的量子漂移-扩散方法模拟了电流输运，该方法得到了一个新的厚度相关迁移率模型的支持，该模型很好地拟合了SiO2和HfO2栅极电介质的现有测量结果。利用量子漂移-扩散模型和基于量子传输边界法的全量子输运方法对导通电流进行了模拟，该方法假设纯弹道输运。对相同电氧化层厚度的SiO2和HfO2绝缘栅场效应管的性能比较表明，与前者相比，后者提供了短通道效应的轻微退化，但同时，尽管固有的低场迁移率退化，但由于侧向电容耦合效应，导通电流得到了改善。
In this work we investigate the performance of double-gate and cylindrical nanowire FETs with high-kappa, gate dielectrics at their extreme miniaturization limits. The model fully accounts for quantum electrostatics; current transport is simulated by an improved quantum drift-diffusion approach supported by a new thickness-dependent mobility model which nicely fits the available measurements for both SiO2 and HfO2 gate dielectrics. The on-current is simulated using both the quantum drift-diffusion model and a full-quantum transport approach based on the quantum transmitting boundary method, which assumes a purely ballistic transport. The performance comparison between SiO2 and HfO2 insulated-gate FETs with the same electrical oxide thickness demonstrates that the latter provides a slight degradation of the short-channel effect compared with the former but, at the same time, gives an improved on-current due to lateral capacitive-coupling effects, despite the inherent degradation of the low-field mobility.