GdV6Sn6: A Multi-carrier Metal with Non-magnetic 3d-electron Kagome Bands and 4f-electron Magnetism
GdV6Sn6: A Multi-carrier Metal with Non-magnetic 3d-electron Kagome Bands and 4f-electron Magnetism
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DOI：
10.7566/jpsj.90.124704
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发表时间：
2021-12-15
影响因子：
1.7
通讯作者：
Kindo, Koichi
中科院分区：
文献类型：
--
作者：
Ishikawa, Hajime;Yajima, Takeshi;Kindo, Koichi
本文研究了由磁性Gd三角晶格隔开的非磁性V-kagome层的GdV_6Sn_6单晶的电子性质。GdV_6Sn_6在低温下表现出独特的磁输运特性，如非线性霍尔电阻率和在磁场H中电阻R的增加，R近似于H_（0.75）~ 56 T，具有Shubnikov-De哈斯振荡。对非磁性类似物YV 6Sn 6的研究和第一性原理计算表明，这些性质与V-kagome层产生的能带有关。在5 K的GdV 6Sn 6中的磁性转变修改了输运性质，指向三角形晶格上的Gd自旋与V-kagome层中的载流子之间的耦合。
Electronic properties of the single crystal of GdV6Sn6, where non-magnetic V-kagome layers are separated by magnetic Gd-triangular lattice, are investigated. GdV6Sn6 exhibits unique magnetotransport properties at lowtemperature such as non-linear Hall resistivity and increase of resistance R in magnetic field H as R similar to H0.75 up to 56 T with Shubnikov-De Haas oscillations. Investigation of the non-magnetic analogue YV6Sn6 and the first principles calculations reveal these properties are relevant to the bands arising from the V-kagome layer. A magnetic transition at 5 K in GdV6Sn6 modifies the transport properties, pointing to a coupling between Gd-spins on the triangular lattice and carriers in the V-kagome layer.