MoS2 nanosheets functionalized with ferrocene-containing polymer via SI-ATRP for memristive devices with multilevel resistive switching
MoS2 nanosheets functionalized with ferrocene-containing polymer via SI-ATRP for memristive devices with multilevel resistive switching
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DOI：
10.1016/j.eurpolymj.2022.111316
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发表时间：
2022-05
影响因子：
6
通讯作者：
Qing Yan;Fei Fan;Bin Zhang;Gang Liu;Yu Chen
中科院分区：
文献类型：
--
作者：
Qing Yan;Fei Fan;Bin Zhang;Gang Liu;Yu Chen
设计和制备具有多级忆阻开关特性的忆阻材料是提高器件数据存储容量的有效策略。本文通过聚多巴胺（PDA）介导的表面引发原子转移自由基聚合（SI-ATRP），在二硫化钼纳米片（MoS 2NS）上接枝含二茂铁的聚合物（PFMMA），合成了一种新型的二维纳米材料MoS 2-PDA-PFMMA。所制备的Al/MoS 2-PDA-PFMMA/ITO多层结构电子器件具有不对称的多级阻变特性，与传统的电忆阻器件相比，具有更大的数据存储容量。该工作通过材料结构设计实现了器件的多级阻变，为研制超大容量忆阻器件开辟了新的前景。
Designing and preparing memristive materials with multilevel memristive switching characteristics is an effective strategy for improving the data storage capacity of devices. Herein, by grafting a ferrocene-containing polymer (PFMMA) from molybdenum disulfide nanosheets (MoS2NSs) via polydopamine (PDA)-mediated surface-initiated atom transfer radical polymerization (SI-ATRP), we synthesized a novel two-dimensional nanomaterial, MoS2-PDA-PFMMA. The fabricated Al/MoS2-PDA-PFMMA/ITO sandwich-structured electronic device exhibited asymmetric multilevel resistive switching characteristics, which should give it a larger data storage capacity compared with traditional electrical bistable memristive devices. This work realized multilevel resistive switching in the device by material structure design, which opens up a new perspective for developing memristive devices with ultra-large data storage capacities.