Fabrication of Printed Organic Thin-Film Transistors Using Roll Printing
Fabrication of Printed Organic Thin-Film Transistors Using Roll Printing
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使用滚筒印刷制造印刷有机薄膜晶体管
DOI：
10.1143/jjap.48.04c181
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发表时间：
2008
影响因子：
1.5
通讯作者：
Dong
中科院分区：
文献类型：
--
作者：
Jeongdai Jo;Jong;Taik;Dong
在150 ×134 mm 2柔性塑料基板上，采用凹版印刷或柔性版印刷方法，采用不同沟道长度的雕刻板和纳米颗粒银（Ag）浆料，制备了有机薄膜晶体管（OTFT）的辊印电极。辊印OTFT使用聚（乙烯基苯酚）（PVP）聚合物半导体和双（三异丙基-甲硅烷基乙炔基）并五苯（TIPS-并五苯）有机半导体。根据滚动印刷方法类型的选择，获得的印刷OTFT的场效应迁移率在0.08和0.1 cm 2 V-1 s-1之间，开/关电流比在104和105之间，亚阈值斜率在1.94和2.53之间V/十倍。辊式印刷和可溶性工艺使得在塑料基板上制造沟道长度在16至62 μm之间的印刷OTFT成为可能;这在以前使用传统印刷技术是不可能的。所提出的制造工艺比传统的制造技术短20个步骤。
The roll-printed electrodes of organic thin-film transistors (OTFTs) were fabricated by gravure or flexography printing using engraved plates with various channel lengths and nanoparticle silver (Ag) pastes on flexible 150 ×134 mm2 plastic substrates. The roll-printed OTFTs used poly(vinyl phenol) (PVP) polymeric dielectrics and bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) organic semiconductors. Depending on the choice of the type of roll-printing method, the printed OTFTs obtained had a field-effect mobility between 0.08 and 0.1 cm2 V-1 s-1, an on/off current ratio between 104 and 105, and a subthreshold slope between 1.94 and 2.53 V/decade. The roll printing and soluble processes made it possible to fabricate a printed OTFT with a channel length between 16 to 62 µm on a plastic substrate; this was not previously possible using traditional printing techniques. The proposed fabrication process was 20 steps shorter than conventional fabrication techniques.