Adhesive Force Characterization for MEM Logic Relays With Sub-Micron Contacting Regions
Adhesive Force Characterization for MEM Logic Relays With Sub-Micron Contacting Regions
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具有亚微米接触区域的 MEM 逻辑继电器的粘附力表征
DOI：
10.1109/jmems.2013.2269995
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发表时间：
2014
影响因子：
2.7
通讯作者：
T. Liu
中科院分区：
文献类型：
--
作者：
Jack Yaung;L. Hutin;J. Jeon;T. Liu
接触粘合力(Fa)的调整对于继电器小型化至关重要，因为驱动面积和/或驱动电压必须足够大，以克服弹簧恢复力(Fk)才能接通继电器，并且Fk必须大于Fa才能关闭继电器。本文研究了横向尺寸为100 nm的接触凹陷区的MEM逻辑继电器的接触粘附力。结果表明，范德华作用力占主导地位。钨与钨接触时的粘附力为0.02nN/nm2。通过减小接触凹陷尺寸和接触表面涂层，可以减少FA。
Contact adhesive force (Fa) scaling is critical for relay miniaturization, since the actuation area and/or actuation voltage must be sufficiently large to overcome the spring restoring force (Fk) in order to turn on the relay and Fk must be larger than Fa in order to turn off the relay. In this work, contact adhesive force is investigated in MEM logic relays with contact dimple regions as small as 100 nm in lateral dimension. The results indicate that van der Waals force is predominant. An adhesive force of 0.02 nN/nm2 is extracted for tungsten-to-tungsten contact. Fa reduction should be possible with contact dimple size reduction and contact surface coating.