Charge carrier transport in an emissive layer of green electrophosphorescent devices
Charge carrier transport in an emissive layer of green electrophosphorescent devices
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DOI：
10.1063/1.1813628
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发表时间：
2004-11-01
影响因子：
4
通讯作者：
Naito, H
中科院分区：
文献类型：
--
作者：
Matsusue, N;Ikame, S;Naito, H
用飞行时间光谱和时间分辨光致发光光谱研究了fac三（2-苯基吡啶）铱（Ⅲ）（Ir（ppy）（3））掺杂4，4（'）-N，N-'-二咔唑联苯（CBP）薄膜中载流子的产生和输运.发现激发能从CBP迅速转移到Ir（ppy）（3），并在Ir（ppy）（3）位上产生载流子.随着Ir（ppy）（3）浓度的增加，电子漂移迁移率略有降低，而空穴传输信号变得不可观察。Ir（ppy）（3）掺杂CBP薄膜的电子和空穴输运性质是由Ir（ppy）（3）的最低未占分子轨道和最高已占分子轨道相对于CBP的能级决定的。(C)2004年，美国物理学会。
Charge carrier generation and transport in fac tris (2-phenylpyridine) iridium (III) (Ir(ppy)(3)) doped in 4,4(')-N,N-'-dicarbazole-biphenel (CBP) thin films have been studied in terms of time-of-flight and time-resolved photoluminescence spectroscopies. It is found that the excitation energy rapidly transfer from CBP to Ir(ppy)(3), and that the charge carriers are generated on Ir(ppy)(3) sites. With increasing Ir(ppy)(3) concentration, the electron drift mobility is slightly decreased, while the hole transit signals become unobservable. The electron and hole transport properties of Ir(ppy)(3) doped CBP thin films result from the energy levels of the lowest unoccupied molecular orbital and the highest occupied molecular orbital of Ir(ppy)(3) with respect to those of CBP. (C) 2004 American Institute of Physics.