Crystallization behavior and ferroelectric property of HfO2–ZrO2 films fabricated by chemical solution deposition
Crystallization behavior and ferroelectric property of HfO2–ZrO2 films fabricated by chemical solution deposition
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DOI：
10.7567/jjap.57.11uf06
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发表时间：
2018-09
影响因子：
1.5
通讯作者：
Shuhei Nakayama;H. Funakubo;H. Uchida
中科院分区：
文献类型：
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作者：
Shuhei Nakayama;H. Funakubo;H. Uchida
在这项研究中，我们调查的前体HfO 2-ZrO 2（HZO）薄膜的结晶行为，以增加分数的铁电相正交对称的结晶薄膜。通过化学溶液沉积（CSD）工艺制备的Hf0.5Zr0.5O2的前体膜根据结晶温度结晶为四方晶相（在600 °C下）或正交晶相和单斜晶相的混合物（在700 °C及以上）。在700 °C结晶的HZO薄膜中观察到一个饱和的P-E磁滞回线，其反射极化（Pr）为8 µC/cm 2，而在600 °C结晶的HZO薄膜中证实了一个扭曲的P-E曲线，其Pr值较低。
In this study, we investigate the crystallization behavior of the precursor HfO2–ZrO2 (HZO) thin film to increase the fraction of the ferroelectric phase with orthorhombic symmetry in the resulting crystallized films. The precursor film of Hf0.5Zr0.5O2 prepared by the chemical solution deposition (CSD) process was crystallized to the tetragonal phase (at 600 °C) or a mixture of the orthorhombic and monoclinic phases (at 700 °C and above), depending on the crystallization temperature. A saturated P–E hysteresis loop with a remanent polarization (Pr) of 8 µC/cm2 was observed for the HZO films crystallized at 700 °C, whereas a distorted P–E curve with a lower Pr value was confirmed for the film crystallized at 600 °C.