Rashba effect within the space-charge layer of a semiconductor
Rashba effect within the space-charge layer of a semiconductor
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DOI：
10.1088/1367-2630/16/4/045003
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发表时间：
2014-04-04
影响因子：
3.3
通讯作者：
Tang, S-J
中科院分区：
文献类型：
--
作者：
Lin, Chung-Huang;Chang, Tay-Rong;Tang, S-J
观察到的半导体的重空穴、轻空穴和分裂带边缘是两个物理过程的结果：原子自旋轨道相互作用和固态带抗交叉。在这项工作中，我们用Pb/Ge(111)-根3 ×根3 R30度或2ML的Pb膜在Ge（111）上详细检查了Ge空间电荷层内的四个带边状带。我们的研究结果表明，传统的半导体带边缘图像实际上是粗糙的。此外，动量依赖的Rashba分裂效应可以用来解释观察到的非分裂带，表明Rashba效应是半导体表面附近的固有特性。
The observed heavy-hole, light-hole and split-off band edges of a semiconductor are the well known consequence of two physical processes: atomic spin-orbital interaction and solid-state band-band anticrossing. In this work, we examined the four band-edge-like bands in great detail within the Ge space-charge layer with either Pb/Ge(111)-root 3 x root 3 R30 degrees or a 2ML Pb film on Ge(111). Our results reveal that the conventional picture of band edges for a semiconductor is actually crude. In addition, momentum-dependent Rashba splitting effect can be included to explain the observed non-split-off band, indicating the Rashba effect as an intrinsic property near a semiconductor surface.