High-mobility BaSnO3 grown by oxide molecular beam epitaxy
High-mobility BaSnO3 grown by oxide molecular beam epitaxy
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DOI：
10.1063/1.4939657
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发表时间：
2016-01-01
期刊：
影响因子：
6.1
通讯作者：
Stemmer, Susanne
中科院分区：
文献类型：
--
作者：
Raghavan, Santosh;Schumann, Timo;Stemmer, Susanne
高迁移率钙钛矿BaSnO 3薄膜作为电力电子、透明导体的新型宽带隙半导体，以及作为与功能钙钛矿外延集成的高迁移率沟道，具有重要的意义。尽管单晶的结果很有希望，但高迁移率的BaSnO 3薄膜的生长一直具有挑战性。在这里，我们展示了一种改进的氧化物分子束外延（MBE）的方法，它提供预氧化的SnOx。该技术解决了与挥发性SnO形成相关的三元锡酸盐的MBE中的问题，并且能够生长外延的化学计量的BaSnO 3。我们证明室温下的电子迁移率为150 cm（2）V-1 s（-1）的薄膜生长在PrScO 3。这些结果为未来的电子设备提供了广泛的机会。(C)2016年作者。除非另有说明，否则所有文章内容均根据Creative Commons Attribution 3.0 Unported License许可。
High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm(2) V-1 s(-1) in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.