Breaking the thermally induced write error in heat assisted recording by using low and high Tc materials
Breaking the thermally induced write error in heat assisted recording by using low and high Tc materials
复制标题
使用低Tc和高Tc材料打破热辅助记录中的热致写入错误
DOI：
10.1063/1.4802882
复制
发表时间：
2013
影响因子：
4
通讯作者：
T. Schrefl
中科院分区：
文献类型：
--
作者：
D. Suess;T. Schrefl
热辅助记录被认为是未来关键的记录技术。在H. J. Richter等人[J.Appl.Phys.111，033909（2012）]指出，由于热致写入错误，存储密度将被限制在15-20 Tbit/in 2。在这封信中，我们提出了一种复合结构，由两种材料具有不同的居里温度。在该复合材料中，热写入误差在高达约50-100 Tbit/in 2的面密度下是可忽略的。
Heat assisted recording is believed as a key future recording technology. In the work of H. J. Richter et al. [J. Appl. Phys. 111, 033909 (2012)] it is stated that storage densities will be limited to 15–20 Tbit/in2 due to thermally induced write errors. In this letter we propose a composite structure consisting of two materials with different Curie temperatures. In this composite material the thermal write error is negligible up to areal densities of about 50-100 Tbit/in2.