Toward integrated single-photon-counting microarrays
Toward integrated single-photon-counting microarrays
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DOI：
10.1117/1.1524608
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发表时间：
2003-01-01
影响因子：
1.3
通讯作者：
Mathewson, A
中科院分区：
文献类型：
--
作者：
Jackson, JC;Phelan, D;Mathewson, A
硅、浅结、盖革模式雪崩光电二极管（APD）可以用互补金属氧化物半导体（CMOS）兼容的工艺步骤制造，并提供单光子计数灵敏度。随着我们朝着提供集成检测越来越纳米尺寸的排放，小面积的检测器和阵列，可以很容易地集成到市场上的系统将是必需的。制作了直径为10、15和20 μ m的盖革模式二极管，在室温下，在击穿电压以上10 V时测得的暗计数分别为9、95和990。模拟和测量的光学串扰被发现显着减少探测器像素间距超过300妈妈。发现暗计数随温度的活化能为0.58 eV，表示温度每降低27 ℃暗计数下降一个数量级。的探测器的响应度，没有涂层，被发现在550和650 nm之间的峰值与光子探测概率为43%，在10 V以上的击穿电压。探测器的低暗计数和高光子探测概率突出了这些探测器用于荧光衰减实验以及未来集成光子探测系统的潜力。(C)2003年，美国光电仪器工程师学会。
Silicon, shallow junction, Geiger-mode avalanche photodiodes (APDs) can be manufactured with complementary metal-oxide semiconductor (CMOS) compatible processing steps and provide single-photon-counting sensitivity. As we move toward providing integrated detection of increasingly nanoscopic-sized emissions, small-area detectors and arrays that can be easily integrated into marketable systems will be required. Geiger-mode diodes with diameters of 10, 15, and 20 Am are manufactured and the dark counts measured at 10 V above breakdown are 9, 95, and 990, respectively, at room temperature. The simulated and measured optical crosstalk is found to be significantly reduced for detector pixel pitches beyond 300 mum. The activation energy of the dark count with temperature is found to be 0.58 eV, representing an order of magnitude drop in dark count for every 27degreesC decrease in temperature. The responsivity of the detectors, without antireflection coatings, is found to peak between 550 and 650 nm with a photon detection probability of 43% at 10 V above the breakdown voltage. The low dark counts of the detectors and high photon detection probability highlight the potential these detectors have for fluorescence decay experiments and also in future integrated photonic detection systems. (C) 2003 society of Photo-Optical Instrumentation Engineers.