Etching of GaAs(100) with Aqueous Ammonia Solution: A Synchrotron-Photoemission Spectroscopy Study
Etching of GaAs(100) with Aqueous Ammonia Solution: A Synchrotron-Photoemission Spectroscopy Study
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用氨水溶液蚀刻 GaAs(100)：同步加速器光电发射光谱研究
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
W. Jaegermann
中科院分区：
文献类型：
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作者：
M. Lebedev;E. Mankel;T. Mayer;W. Jaegermann
用高灵敏度的同步辐射光电子能谱研究了氨水溶液对GaAs（100）表面的刻蚀。结果表明，这种处理有效地去除了原生氧化物层，使表面覆盖有元素砷，以及砷的氢氧化物AsOH和As（OH）3，氢氧化镓GaOH，和低氧化镓GaxO。在500 °C下退火后，砷和镓的氢氧化物消失，而过量的砷被二聚化。残留的碳污染防止氢氧化镓的消失，并阻碍退火时过量砷的二聚。在退火之前用2-丙醇而不是水冲洗蚀刻的表面导致退火后碳污染的显著减少。
Etching of the GaAs(100) surface with aqueous ammonia solution is studied by highly surface-sensitive synchrotron-radiation photoemission spectroscopy. It is shown that such treatment effectively removes the native oxide layer leaving the surface covered with elemental arsenic, as well as arsenic hydroxides AsOH and As(OH)3, gallium hydroxide GaOH, and gallium suboxide GaxO. After annealing of the surface at 500 °C, the arsenic and gallium hydroxides disappear, while the excess arsenic is dimerized. The residual carbon contamination prevents disappearance of gallium hydroxide and hinders dimerization of excess arsenic on annealing. Rinsing the etched surface with 2-propanol instead of water prior to annealing results in considerable reduction of carbon contamination after annealing.