Reaction of diborane and ammonia gas mixtures in a chemical vapor deposition hot-wall reactor
Reaction of diborane and ammonia gas mixtures in a chemical vapor deposition hot-wall reactor
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乙硼烷和氨气混合物在化学气相沉积热壁反应器中的反应
DOI：
10.1021/j100144a023
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
J. Albella
中科院分区：
文献类型：
--
作者：
C. Gómez;D. Díaz;F. Orgaz;J. Albella
氮化硼已经通过化学气相沉积从乙硼烷和氨气混合物沉积，取决于反应器中的压力，以膜或粉末的形式。氮化硼沉积物的IR分析已被用于获得膜的组成。在研究的温度范围内，600-850 ° C，沉积温度对反应动力学的影响已被解释为假设的变化中产生的乙硼烷和氨分子的活化物种的相对浓度。这一变化通过形成不同的中间体化合物改变了氮化硼合成中遵循的反应路径：氨基二硼烷在低温范围（<700 o C），环硼氮烷在高温（≥775 o C）
Boron nitride has been deposited by chemical vapor deposition from diborane and ammonia gas mixtures, in the form of either films or powders depending on the pressure in the reactor. IR analysis of the boron nitride deposits has been used to obtain the composition of the films. In the temperature range studied, 600-850 o C, the effect of the deposition temperature on the reaction kinetics has been interpreted by assuming a change in the relative concentration of activated species arising from diborane and ammonia molecules. This change modifies the reaction path followed in the boron nitride synthesis through the formation of different intermediate compounds: aminodiborane in the low-temperature range (<700 o C) and borazine at the higher temperatures (≥775 o C)