p-type conduction in unintentional carbon-doped ZnO thin films
p-type conduction in unintentional carbon-doped ZnO thin films
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DOI：
10.1063/1.2768917
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发表时间：
2007-08
影响因子：
4
通讯作者：
Swee Tiam Tan;X. W. Sun;Z. G. Yu;P. Wu;G. Lo;D. Kwong
中科院分区：
文献类型：
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作者：
Swee Tiam Tan;X. W. Sun;Z. G. Yu;P. Wu;G. Lo;D. Kwong
采用金属有机化学气相沉积法生长的掺杂碳ZnO薄膜经生长后退火处理后，出现了p型导电现象。通过二次离子质谱分析和x射线光电子能谱分析证实了碳的存在，预测了退火后ZnO薄膜中间隙位置的氧被固定。利用第一性原理计算，发现ZnO中碳氧团簇缺陷的形成是有利的，并作为一个浅受体。p型碳掺杂ZnO薄膜的低温光致发光在3.3564eV处有一个额外的峰，这是由于受体（碳氧簇缺陷）结合的激子发射所致。
p-type conduction has been observed in unintentional carbon-doped ZnO thin films grown by metal organic chemical vapor deposition through postgrowth annealing treatment. The existence of carbon, which has been verified by secondary ion mass spectrometry and x-ray photoelectron spectroscopy, was predicted to immobilize the oxygen in the interstitial site in ZnO thin films after annealing. Using first principles calculations, the formation of carbon-oxygen cluster defect in ZnO was found to be favorable and acts as a shallow acceptor. The cryogenic photoluminescence of the p-type carbon-doped ZnO thin films shows an additional peak located at 3.3564eV, which was attributed to the acceptor (carbon-oxygen cluster defect) bound exciton emission.