Absence of magnetism in hafnium oxide films
Absence of magnetism in hafnium oxide films
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DOI：
10.1063/1.2146057
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发表时间：
2005-12-19
影响因子：
4
通讯作者：
Guha, S
中科院分区：
文献类型：
--
作者：
Abraham, DW;Frank, MM;Guha, S
我们通过化学气相沉积和原子层沉积在硅片上建立了薄的、电子级的、氧化铪和硅酸铪薄膜的磁性极限。在我们测量技术的灵敏度限制下，这些样品中没有铁磁性。用不锈钢镊子处理污染会产生可测量的磁信号。该污染物的磁性与最近一篇报道中描述的铁磁性HfO2相似，包括力矩大小、磁化场依赖性和空间不对称性。(c) 2005年美国物理研究所。
We establish the limits of magnetism in thin, electronic grade, hafnium oxide, and hafnium silicate films deposited onto silicon wafers by chemical vapor deposition and atomic layer deposition. To the limits of sensitivity of our measurement techniques, no ferromagnetism occurs in these samples. Contamination by handling with stainless-steel tweezers leads to a measurable magnetic signal. The magnetic properties of this contamination are similar to those attributed to ferromagnetic HfO2 in a recent report, including the magnitude of moment, magnetization field dependence, and spatial asymmetry. (c) 2005 American Institute of Physics.