Strained In0.40Al0.60As window layers for indium phosphide solar cells
Strained In0.40Al0.60As window layers for indium phosphide solar cells
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用于磷化铟太阳能电池的应变In0.40Al0.60As窗口层
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
D. Flood
中科院分区：
文献类型：
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作者：
R. Jain;G. Landis;D. Wilt;D. Flood
采用宽禁带窗口层可以提高磷化铟太阳电池的效率。在这项工作中，我们计算了具有应变(伪晶)In0.40Al0.60As窗口层的InP太阳电池的性能。计算表明，对于10 nm厚的In_(0.40)Al_(0.60)As窗口层，基准和优化的p+n单元的效率分别提高到22%和24%以上(AM0，25 °C)。N+p电池的改善相对较小。
The efficiency of indium phosphide solar cells might be improved by a wide‐band‐gap window layer. In this work we calculate the performance of InP solar cells with a strained (pseudomorphic) In0.40Al0.60As window layer. Calculations show that the efficiencies of baseline and optimized p+n cells are increased to more than 22% and 24% (AM0, 25 °C), respectively, for In0.40Al0.60As window layer of 10 nm thickness. Comparatively little improvement is found for n+p cells.