Light emission from Si quantum dots
Light emission from Si quantum dots
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DOI：
10.1016/s1369-7021(04)00676-5
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发表时间：
2005-01-01
期刊：
影响因子：
24.2
通讯作者：
Fauchet, Philippe M.
中科院分区：
文献类型：
--
作者：
Fauchet, Philippe M.
硅量子点（量子点）作为小到类似于2纳米的直径已被合成的各种技术。由于量子限制和消除体或表面缺陷，这些点可以发射光从近红外线在整个可见光量子效率超过10%。通过添加铒（Er）等发光稀土，发光波长范围扩大到更长的波长。发光器件（LED）已经被制造出来，并且它们的性能开始接近直接带隙半导体或有机LED的性能。一种基于硅量子点的激光器的研究甚至正在进行中。综述了发光硅量子点在材料科学、物理学和器件开发方面的研究进展，并指出了今后的研究方向。
Si quantum dots (QDs) as small as similar to 2 nm in diameter have been synthesized by a variety of techniques. Because of quantum confinement and the elimination of bulk or surface defects, these dots can emit light from the near infrared throughout the visible with quantum efficiencies in excess of 10%. The luminescence wavelength range has been extended to longer wavelengths by the addition of light-emitting rare earths such as erbium (Er). Light-emitting devices (LEDs) have been fabricated and their performances are starting to approach those of direct band gap semiconductor or organic LEDs. A search for a Si QD-based laser is even under way. The state-of-the-art in the materials science, physics, and device development of luminescent Si QDs is reviewed and areas of future research are pointed out.