In Situ Growth of NiO@SnO2 Hierarchical Nanostructures for High Performance H2S Sensing
In Situ Growth of NiO@SnO2 Hierarchical Nanostructures for High Performance H2S Sensing
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用于高性能 H2S 传感的 NiO@SnO2 分层纳米结构的原位生长
DOI:
10.1021/acsami.9b13001
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发表时间:
2019-11-27
影响因子:
9.5
通讯作者:
Qin, Sujie
中科院分区:
文献类型:
--
作者:
Liu, Lin;Wang, Yingyi;Qin, Sujie
Heterostructured metal oxides with large specific surface area are crucial for constructing gas sensors with high performance. However, using slurry-coating and screen-printing methods to fabricate gas sensors cannot result in high uniformity and reproducibility of the sensors. Here, NiO nanowalls decorated by SnO2 nanoneedles (NiO@SnO2) were in situ grown on ceramic microchips via a chemical bath deposition method to detect H2S instead of print-coating and slurry-coating methods. The morphologies and compositions of the NiO@SnO2 hierarchical nanostructures (HNSs) were well tuned by varying the growth time of the NiO@SnO2 HNSs to optimize the sensing performance. The response of the NiO@SnO2 HNSs (2 h) to 1 ppm of H2S was over 23-fold higher than that of the pure NiO nanowalls and 17-fold higher than that of the pure SnO2 nanosheets. This dramatic enhancement is attributed to the large surface area of the NiO@SnO2 HNSs and the p-n heterojunction at the heterointerface of SnO2 and NiO. The variation in the depletion layers (W-SnO2 and W-NiO) at the heterointerface of SnO2 and NiO greatly depends on the properties of the target gases (e.g., electron-withdrawing property (NO2) or electron-donating property (H2S)).