Negative characteristic temperature of GaN-based blue laser diode investigated by numerical simulation
Negative characteristic temperature of GaN-based blue laser diode investigated by numerical simulation
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DOI：
10.1007/s11082-016-0861-y
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发表时间：
2017-01
影响因子：
3
通讯作者：
H. Ryu
中科院分区：
文献类型：
--
作者：
H. Ryu
GaN基蓝色激光二极管（LD）可能表现出异常的温度特性，例如非常高或负的特性温度（T0）。本研究利用数值模拟的方法，探讨具有InGaN双量子阱主动区的蓝光半导体激光器的温度特性。结果表明，量子阱之间的n型掺杂势垒对T0有很大的影响，对于重掺杂势垒的LD结构，可以观察到负的T0。InGaN蓝光LD的负T0主要归因于p侧QW的俄歇复合率随温度的升高而降低，这是由于从p侧到n侧QW的热增强空穴输运的结果。
GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high or negative characteristic temperature (T0). In this work, the temperature characteristics of blue LDs having InGaN double quantum-well (QW) active region are investigated using numerical simulation. It is found that theT0is greatly influenced by the n-type doped barrier between the QWs and a negativeT0can be observed for the LD structure with a heavily doped barrier. The negativeT0of InGaN blue LDs is mainly attributed to the decrease of the Auger recombination rate at the p-side QW with increasing temperature as a result of the thermally enhanced hole transport from the p-side to the n-side QW.