ZnO nanofiber field-effect transistor assembled by electrospinning
ZnO nanofiber field-effect transistor assembled by electrospinning
复制标题
静电纺丝组装ZnO纳米纤维场效应晶体管
DOI：
10.1111/j.1551-2916.2007.02162.x
复制
发表时间：
2008-02-01
影响因子：
3.9
通讯作者：
Pan, Wei
中科院分区：
文献类型：
--
作者：
Wu, Hui;Lin, Dandan;Pan, Wei
采用静电纺丝法组装了ZnO纳米纤维场效应晶体管（FET）。采用静电纺丝法首次合成了直径约70 nm、长度超过100 μ m的均匀ZnO纳米纤维。利用两个平行电极作为光纤集电极，我们成功地在电极上放置了一根ZnO纳米纤维，并基于组装好的纳米纤维制备了场效应管器件。在FET器件上进行了电输运测量，结果表明ZnO纳米纤维是本征n型半导体。目前的研究结果表明，静电纺丝可以作为一种简单而经济的方法，用于组装一维纳米结构，用于构建各种应用的集成纳米器件，如晶体管、传感器、二极管和光电探测器。
A ZnO nanofiber field-effect transistor (FET) was assembled by electrospinning. Uniform ZnO nanofibers with a diameter of similar to 70 nm and length over 100 mu m were first synthesized by electrospinning. Using two paralleled electrodes as fiber collectors, we have successfully placed a single ZnO nanofiber on the electrodes, and an FET device was fabricated based on the assembled nanofiber. An electrical transport measurement was conducted on the FET device, showing that ZnO nanofibers are intrinsic n-type semiconductors. The present findings demonstrate that electrospinning can potentially be used as a straightforward and cost-effective means for the assembly of one-dimensional nanostuctures for building integrated nanodevices for various applications, such as transistors, sensors, diodes, and photodetectors.