Microwave Dielectric Properties of CuO-V2O5-Bi2O3-Doped ZnNb2O6 Ceramics with Low Sintering Temperature
Microwave Dielectric Properties of CuO-V2O5-Bi2O3-Doped ZnNb2O6 Ceramics with Low Sintering Temperature
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DOI：
10.1007/s10832-005-6586-0
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发表时间：
2005
影响因子：
1.7
通讯作者：
Y. Zhang;Zhenxing Yue;Z. Gui;L. Li
中科院分区：
文献类型：
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作者：
Y. Zhang;Zhenxing Yue;Z. Gui;L. Li
系统地研究了添加cuo - v2o5 - bi2o3的低温烧结znnb2o6陶瓷的微波介电性能。CuO、v2o5和bi2o3的共掺杂可以显著降低znnb2o6陶瓷的烧结温度，从1150°C降至870°C。在晶界结合处出现了含Cu、V、Bi和Zn的二次相，并且随着cuo - v2o5 - bi2o3含量的增加，二次相的数量增加。在微波频率（7 ~ 9 GHz）下，该体系的介电性能与陶瓷的相对密度、添加剂含量和微观结构有显著的相关性。随着cuo - v2o5 - bi2o3添加量从1.5 wt%增加到4.0 wt%， znnb2o6陶瓷的介电常数（εr）从21.95增加到24.18。该体系的质量因子（Q×f）随cuo - v2o5 - bi2o3含量的增加而降低，烧结陶瓷的质量因子范围在36118 ~ 67100 GHz之间，添加cuo - v2o5 - bi2o3的样品的质量因子allQ×fvalues低于未掺杂znnb2o6陶瓷的质量因子allQ×fvalues。当cuo - v2o5 - bi2o3从1.5 wt%增加到4.0 wt%时，谐振频率温度系数（τf）从- 33.16 ~ - 25.96 ppm/°C变化
Microwave dielectric properties of low temperature sintering ZnNb2O6ceramics doped with CuO-V2O5-Bi2O3additions were investigated systematically. The co-doping of CuO, V2O5and Bi2O3can significantly lower the sintering temperature of ZnNb2O6ceramics from 1150 to 870∘C. The secondary phase containing Cu, V, Bi and Zn was observed at grain boundary junctions, and the amount of secondary phase increased with increasing CuO-V2O5-Bi2O3content. The dielectric properties at microwave frequencies (7–9 GHz) in this system exhibited a significant dependence on the relative density, content of additives and microstructure of the ceramics. The dielectric constant (εr) of ZnNb2O6ceramics increased from 21.95 to 24.18 with increasing CuO-V2O5-Bi2O3additions from 1.5 to 4.0 wt%. The quality factors (Q×f) of this system decreased with increasing CuO-V2O5-Bi2O3content and ranged from 36118 to 67100 GHz for sintered ceramics, furthermore, allQ×fvalues of samples with CuO-V2O5-Bi2O3additions are lower than that of un-doped ZnNb2O6ceramics sintered at 1150∘C for 2 h. The temperature coefficient of resonant frequency (τf) changed from −33.16 to −25.96 ppm/∘C with increasing CuO-V2O5-Bi2O3from 1.5 to 4.0 wt%