Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes
Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes
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硅中供体的电子自旋共振实验。
DOI：
10.1103/physrev.124.1068
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发表时间：
1961
期刊：
影响因子：
--
通讯作者：
G. Feher
中科院分区：
文献类型：
--
作者：
D. Wilson;G. Feher
通过使样品受到单轴应力并观察电子自旋共振谱的变化，研究了硅中锑、磷和砷杂质的激发态。实验在 1.25 K 和 ~ 9000 Mc/sec 下对受到高达 10− 3 应变的硅样品进行。根据超精细分裂的减少和在应变下观察到的 g 各向异性，推断出以下结果：对于 11 ev 的变形势，发现磷的谷轨道分裂（即单线态-双线态间距）为 0.015 ev，砷的谷轨道分裂（即单重态间距）为 0.015 ev 0.023 ev，锑为 0.013 ev。对于掺磷硅，我们得到的 H 平行于谷轴 (g II) 和 H 垂直于谷轴 (g⊥) 的 g 值之差为 g II− g⊥=(1.04±0. 0 4)× 10− 3。
The excited states of the antimony, phosphorus, and arsenic impurities in silicon have been investigated by subjecting samples to a uniaxial stress and observing the change in the electron spin resonance spectrum. The experiments were performed at 1.25 K and∼ 9000 Mc/sec on silicon samples subjected to strains up to 10− 3. From the reduction in the hyperfine splitting and the observed g anisotropy under strain the following results were deduced: For a deformation potential of 11 ev, the valley-orbit splitting (ie, singlet-doublet spacing) for phosphorus was found to be 0.015 ev, for arsenic 0.023 ev, and for antimony 0.013 ev. For the difference in g values with H parallel (g II) and H perpendicular (g⊥) to the valley axis we obtained for phosphorus-doped silicon, g II− g⊥=(1.04±0. 0 4)× 10− 3.