Fabrication of the Si/Al2O3/SiO2/Si Structure Using O2 Annealed Al2O3/Si Structure
Fabrication of the Si/Al2O3/SiO2/Si Structure Using O2 Annealed Al2O3/Si Structure
复制标题
使用 O2 退火 Al2O3/Si 结构制造 Si/Al2O3/SiO2/Si 结构
DOI：
10.1143/jjap.39.2078
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发表时间：
2000
影响因子：
1.5
通讯作者：
K. Sawada
中科院分区：
文献类型：
--
作者：
M. Ishida;H. Hori;Fumitaka Kondo;D. Akai;K. Sawada
为了提高绝缘性，研究了采用 1000℃ O2 退火在外延 Al2O3(100) 和 Si(100) 衬底之间的界面上形成 SiO2 层，并提出 Al2O3(100)/SiO2/Si(100) 结构作为绝缘体上硅 (SOI) 衬底。 Al2O3/SiO2/Si结构的击穿电压性能比Al2O3/Si结构的击穿电压性能从8 V提高到50 V。此外，Al2O3/SiO2/Si结构上进行了Si(100)生长，Si顶层的形貌非常光滑。衬底上的金属氧化物半导体场效应晶体管（MOSFET）表现出优异的电性能，这表明SOI具有高结晶度。
The formation of a SiO2 layer in the interface between epitaxial Al2O3(100) and a Si(100) substrate, in order to improve the insulation, was studied using O2 annealing at 1000°C, and the Al2O3(100)/SiO2/Si(100) structure was proposed as a Si-on-insulator (SOI) substrate. The breakdown voltage property of Al2O3/SiO2/Si, rather than that of the Al2O3/Si structure, was improved from 8 V to 50 V. Moreover, Si(100) growth on the Al2O3/SiO2/Si structure was carried out, and the morphology of the Si top layer was very smooth. Metal-oxide-semiconductor field effect transistors (MOSFETs) on the substrates show excellent electrical properties, which indicates the high crystallinity of SOI.