Characterization and dielectric properties of Sr4M2Ti4Ta6O30 (M = Pr and Eu) ceramics
Characterization and dielectric properties of Sr4M2Ti4Ta6O30 (M = Pr and Eu) ceramics
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Sr4M2Ti4Ta6O30（M = Pr 和 Eu）陶瓷的表征和介电性能
DOI：
10.1016/j.jallcom.2010.03.212
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发表时间：
2010-06
影响因子：
6.2
通讯作者：
Hu, Changzheng
中科院分区：
文献类型：
--
作者：
Peng, Xiyang;Fang, Liang;Li, Chunchun;Wu, Bolin;Hu, Changzheng
采用高温固相反应法制备了Sr4Pr2Ti4Ta6O30（SPTT）和Sr4Eu2Ti4Ta6O30（SETT）多晶样品。研究了化合物的形成、结构、介电性能和铁电性能。sr4eu2ti4ta6o30在室温下为具有填充四方钨青铜（TB）结构的铁电相，在90℃左右发生弥漫型铁电-准电相变，具有弛豫性质；sr4pr2ti4ta6o30在室温下为具有TB结构的准电相。在1MHz时，SPTT的介电常数为181，介电损耗为3.6×10−3，介电常数温度系数为负（τ]）； SETT在室温下的介电常数为192，介电损耗为7.7×10−3，介电损耗为正（τ]）， SPTT和SETT的非均质混合物或两者之间的固溶体可用于制备钨青铜结构的温度稳定介电材料。
Polycrystalline samples of Sr4Pr2Ti4Ta6O30(SPTT) and Sr4Eu2Ti4Ta6O30(SETT) were prepared by a high temperature solid-state reaction technique. The formation, structure, dielectric and ferroelectric properties of the compounds were studied. Sr4Eu2Ti4Ta6O30is found to be a ferroelectric phase with filled tetragonal tungsten bronze (TB) structure at room temperature and undergoes a diffuse type ferroelectric–paraelectric phase transition around 90°C with relaxor properties, while Sr4Pr2Ti4Ta6O30belongs to paraelectric phase with TB structure at room temperature. At 1MHz, SPTT exhibits a high dielectric constant of 181 and a low dielectric loss of 3.6×10−3with a negative temperature coefficient of the dielectric constant (τɛ), and SETT has a high dielectric constant of 192 and low dielectric loss of 7.7×10−3with a positive τɛat room temperature, and heterogeneous mixtures of SPTT and SETT or a solid solution between them might be used to manufacture a tungsten bronze-structured temperature-stable dielectrics.
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影响因子：
6.2
作者：
P. Ganguly;A. Jha;K. L. Deori
通讯作者：
P. Ganguly;A. Jha;K. L. Deori
影响因子：
3.9
作者：
M. Stennett;I. Reaney;G. C. Miles;A. West;C. Kirk
通讯作者：
M. Stennett;I. Reaney;G. C. Miles;A. West;C. Kirk
影响因子：
5.7
作者：
Chen, XM;Sun, YH;Zheng, XH
通讯作者：
Zheng, XH
DOI：
10.1023/a:1012944927315
发表时间：
2001-12
期刊：
Journal of Materials Science: Materials in Electronics
影响因子：
--
作者：
P. Rao;S. Ghosh;P. Koshy
通讯作者：
P. Rao;S. Ghosh;P. Koshy
影响因子：
5.7
作者：
M. Stennett;G. C. Miles;J. Sharman;I. Reaney;A. West
通讯作者：
M. Stennett;G. C. Miles;J. Sharman;I. Reaney;A. West