A 670 GHz Low Noise Amplifier with <10 dB Packaged Noise Figure
A 670 GHz Low Noise Amplifier with <10 dB Packaged Noise Figure
复制标题
DOI：
10.1109/lmwc.2016.2605458
复制
发表时间：
2016-10-01
影响因子：
3
通讯作者：
Mei, X. B.
中科院分区：
文献类型：
--
作者：
Deal, W. R.;Zamora, A.;Mei, X. B.
本文介绍了一种工作在670 GHz的封装低噪声放大器（LNA）。LNA采用新一代25 nm InP HEMT，最大频率为1.5 THz。该8级放大器在15 GHz带宽内测得的封装相关增益约为16 dB，噪声系数范围为9.4-9.9 dB。这些结果表明，在灵敏度优于3 dB的改善，以前公布的InP HEMT的结果，并代表在此工作频率下的任何LNA的最低测量噪声系数。
In this letter, a packaged Low Noise Amplifier (LNA) operating at 670 GHz is presented. The LNA uses a new generation of 25 nm InP HEMT with 1.5 THz f(MAX). The eight-stage amplifier shows approximately 16 dB associated gain in package with a noise figure ranging from 9.4-9.9 dB measured across a 15 GHz bandwidth. These results represent better than 3 dB improvement in sensitivity to previously published InP HEMT results, and represent the lowest measured noise figure for any LNA at this operating frequency.