Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
复制标题
具有肖特基面内栅极的新型 GaAs 基单电子晶体管，工作温度高达 20 K
DOI：
10.1143/jjap.35.1132
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发表时间：
1996
影响因子：
1.5
通讯作者：
Hideki Hasegawa Hideki Hasegawa
中科院分区：
文献类型：
--
作者：
K. Jinushi;H. Okada;Tamotsu Hashizume Tamotsu Hashizume;Hideki Hasegawa Hideki Hasegawa
为了提高gaas基单电子晶体管（SET）的工作温度，提出了一种基于电压控制二维电子气体（2DEG）耗尽的肖特基平面内栅极（IPG） SET。在器件制备方面，采用电子束光刻和原位电化学方法制备了mbe生长的AlGaAs/GaAs 2DEG晶圆，在2DEG的侧壁上实现了长度为200 nm的窄Pt IPGs。所制备的set在低温下清晰地表现出具有库仑间隙和库仑阶梯的库仑振荡。在20 K处观察到库仑振荡，这远远高于类似尺寸的几百nm的分栅器件的工作温度。用肖特基IPG的2DEG耗尽特性来解释器件特性的小电容值和观察到的强偏置依赖性。库仑隙内漏电流符合共隧理论。
In an attempt to enhance the operation temperature of GaAs-based single-electron transistors (SETs), a novel Schottky in-plane gate (IPG) SET based on voltage-controlled depletion of two-dimensional electron gas (2DEG) was proposed, fabricated and characterized. For device fabrication, EB lithography and the in-situ electrochemical process were applied to a MBE-grown AlGaAs/GaAs 2DEG wafer, and narrow Pt IPGs with 200 nm length were realized on the side walls of 2DEG. The fabricated SETs clearly showed Coulomb oscillations with a Coulomb gap and Coulomb staircase at low temperatures. Coulomb oscillation was observed up to 20 K which is much higher than the operation temperature of split-gate devices having similar dimensions of several hundred nm. The small capacitance values as well as the observed strong bias dependences of device characteristics are explained in terms of the depletion characteristics of 2DEG with the Schottky IPG. The current leakage within the Coulomb gap is compatible with the cotunneling theory.