Thermal Expansion Coefficient of Si and Ge
Thermal Expansion Coefficient of Si and Ge
复制标题
Si和Ge的热膨胀系数
DOI：
10.1143/jpsj.42.1491
复制
发表时间：
1977
影响因子：
1.7
通讯作者：
T. Soma
中科院分区：
文献类型：
--
作者：
T. Soma
基于声子频率和弹性常数随压力变化的唯象理论，研究了Si和Ge的Gruneisen常数随温度的变化.导出的热膨胀系数在低温下为负的Si和定性与观测数据一致。
On the basis of a phenomenological theory with the experimental pressure dependence of phonon frequencies and elastic constants, the temperature-dependence of the Gruneisen constant is investigated for Si and Ge. The derived thermal expansion coefficient becomes negative at low temperatures for Si and is qualitatively agreement with the observed data.