Experimental Investigation of Hole Transport in Strained $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{SOI}$ pMOSFETs: Part II—Mobility and High-Field Transport in Nanoscaled PMOS
Experimental Investigation of Hole Transport in Strained $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{SOI}$ pMOSFETs: Part II—Mobility and High-Field Transport in Nanoscaled PMOS
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DOI：
10.1109/ted.2011.2177985
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发表时间：
2012-03
影响因子：
3.1
通讯作者：
M. Cassé;L. Hutin;C. Le Royer;D. Cooper;J. Hartmann;G. Reimbold
中科院分区：
文献类型：
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作者：
M. Cassé;L. Hutin;C. Le Royer;D. Cooper;J. Hartmann;G. Reimbold
实验研究了栅长小于17 nm的纳米Si 1-xGex/SOI PMOSFET的高场输运和迁移率。该研究依赖于从室温到20 K的电特性。纳米束电子衍射证实了短沟道中的应变弛豫，解释了空穴速度和迁移率随栅长的减小。尽管有这种应变弛豫，迁移率增益仍然保留在亚100纳米SiGe PMOS中，最大增益为20%的Ge层。短沟道迁移率提取揭示了SiGe沟道PMOS的库仑散射的贡献较低，这可以解释这种迁移率的改善。我们还表明，短沟道输运是由在SiGe层中的Ge组合物，与20%的Ge的最佳浓度。我们终于证明了一个不同的温度依赖性的极限速度在高场之间的SiGe和Si PMOS，这表明，SiGe的运输将由非弹性散射，而不是弹道作为L收缩。
We experimentally studied the high-field transport and mobility in nanoscaled Si1 -xGex/silicon on insulator (SOI) PMOSFETs with gate length down to 17 nm. The study relies on the electrical characterization performed from room temperature down to 20 K. Strain relaxation in short channel has been evidenced by nanobeam electron diffraction, which explains the decrease of hole velocity and mobility with gate length. Despite this strain relaxation, a mobility gain is nevertheless preserved in sub-100-nm SiGe PMOS, with a maximum gain for 20% Ge in the layer. Short-channel mobility extraction reveals a lower contribution of Coulomb scattering for SiGe channel PMOS, which may explain this mobility improvement. We also demonstrate that the short-channel transport is governed by the Ge composition in the SiGe layer, with an optimum concentration of 20% Ge. We have finally evidenced a different temperature dependence of the limiting velocity at high field between SiGe and Si PMOS, suggesting that SiGe transport will be governed by inelastic scattering instead of ballisticity as L is shrunk.