Self-assembled Ge-islands for photovoltaic applications
Self-assembled Ge-islands for photovoltaic applications
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DOI：
10.1016/s1386-9477(02)00637-9
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发表时间：
2003-03-01
影响因子：
3.3
通讯作者：
Kibbel, H
中科院分区：
文献类型：
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作者：
Konle, J;Presting, H;Kibbel, H
我们已经制造了硅太阳能电池与嵌入锗层，形成三维岛的Stranski-Krastanov生长模式。附加的Ge层增加了电池基极中的红外吸收，以实现更高的总光电流并克服异质结构的开路电压的损失。在UHV-MBE室中，使用标准的10 Ω cm p型Si衬底在彼此上生长多达75层锗，每层约8单层厚，由Si间隔层（9-16 nm）分隔。用锑作表面活性剂，可提高膜层中岛的密度，使膜层的密度大于10（11）cm（-2）。这些岛在顶部被200 nm厚的Si层（n型）覆盖，该Si层用作电池的发射极。光致发光测量，原子力显微镜和TEM显微镜被用来表征在各种生长条件下的Ge岛的生长和后热处理。光电流测量表现出更高的响应的制造的太阳能电池在红外制度相比，标准硅电池。(C)2002 Elsevier Science B. V.保留所有权利。
We have fabricated silicon solar cells with embedded germanium layers to form three-dimensional islands in the Stranski-Krastanov growth mode. The additional Ge-layers increase the infrared absorption in the base of the cell to achieve higher overall photocurrent and overcome the loss in open circuit voltage of the heterostructure. In an UHV-MBE chamber up to 75 layers of germanium, each about 8 monolayers thick, separated by Si-spacer layers (9-16 nm) were grown on each other using standard 10 Omega cm p-type Si-substrates. The density of islands in the layers was increased by the use of antimony as surfactant, thus densities > 10(11) cm(-2) were realized. The islands were covered by a 200 nm thick Si-layer (n-type) on top which is used as emitter of the cell. Photoluminescence measurements, AFM and TEM-microscopy were used to characterize the growth of Ge-islands under various growth conditions and post-thermal treatment. Photocurrent measurements exhibit a higher response of the fabricated solar cells in the infrared regime compared to standard Si-cells. (C) 2002 Elsevier Science B.V. All rights reserved.