Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon
Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon
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DOI：
10.1088/0268-1242/18/2/313
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发表时间：
2003-02
影响因子：
1.9
通讯作者：
O. Aleksandrov;N. N. Afonin-N.
中科院分区：
文献类型：
--
作者：
O. Aleksandrov;N. N. Afonin-N.
模拟了含Ge硅热氧化过程中B、P杂质的扩散偏析再分布。在所有的可能性中，Ge影响B和P的扩散是通过Ge中心上的自间隙(SI)的整体复合，而不是通过在热氧化过程中降低SI的表面生成速率。本文描述了Ge对B、P在Si中氧化增强扩散的抑制作用和B、P杂质在SiO_2/Si界面的重新分布。通过比较计算的浓度分布和实验浓度分布，找出了Ge相关中心上的SI体复合参数，并揭示了Ge的存在增加了B在SiO_2-Si系统中的分凝系数。
The diffusion–segregation redistribution of B and P impurities during thermal oxidation of Ge-containing Si has been simulated. In all probability, Ge affects the diffusion of B and P via bulk recombination of self-interstitials (SI) on Ge centres, rather than through a decrease in the rate of surface generation of SI in thermal oxidation. The Ge-induced retardation of the oxidation-enhanced diffusion of B and P in Si and redistribution of the B and P impurities at the SiO2/Si interface are described. The parameters of SI bulk recombination on Ge-related centres are found and an increase in the segregation coefficient of B in the SiO2–Si system in the presence of Ge is revealed by comparing the calculated and experimental concentration distributions.