Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers
Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers
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DOI：
10.1002/crat.201100491
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发表时间：
2012-03-01
影响因子：
1.5
通讯作者：
Suski, T.
中科院分区：
文献类型：
--
作者：
Sarzynski, M.;Leszczynski, M.;Suski, T.
This paper summarizes the knowledge how off-orientation involving lattice planes not parallel to the surface influences properties of AlGaN and InGaN layers. The following issues are presented: (i) morphology of GaN and InGaN layers, (ii) unit cell deformation in AlGaN and InGaN layers, (iii) cracking of AlGaN layers, and (iv) In incorporation into InGaN layers. Finally, laterally patterned on-axis c -plane GaN substrates were successfully used to construct violet laser diodes as well as first multicolour laser diode arrays. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
