A review of high-temperature superconducting films on silicon
A review of high-temperature superconducting films on silicon
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硅高温超导薄膜研究进展
DOI：
10.1088/0953-2048/3/4/001
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发表时间：
1990
影响因子：
3.6
通讯作者：
A. Mogro
中科院分区：
文献类型：
--
作者：
A. Mogro
综述了硅基高温超导薄膜的研究工作。在SrTiO_3单晶上制备了YBa_2Cu_3 O_（7-x）（YBCO）高温超导薄膜，其零电阻转变温度（Tc）为90 K，临界电流密度（Jc）在77 K时达到5 × 106 A·cm ~（-2）。YBCO厚膜和薄膜都已在硅上或在硅上加缓冲层制成，其Tc可达85-90 K。具有未取向晶粒的多晶超导薄膜表现出弱链接行为，并具有较低的Jc值（在77 K时为数百A cm-2），而对于沉积在硅上的双外延缓冲层上的YBCO，已经实现了相当高的值6*104 A cm-2 77 K。
Work on high-temperature superconducting films on silicon is reviewed. High-temperature superconducting thin films of YBa2Cu3O7-x (YBCO) have been made on single crystal SrTiO3 with zero-resistance transition temperatures (Tc) of 90 K and critical current densities (Jc) up to 5*106 A cm-2 at 77 K. Both thick and thin films of YBCO have been made on silicon or on silicon with a buffer layer with Tc up to 85-90 K. Polycrystalline superconducting films with unoriented grains exhibit weak link behaviour and have low values of Jc (hundreds of A cm-2 at 77 K), whereas the considerably higher value of 6*104 A cm-2 77 K has been achieved for YBCO deposited on a double epitaxial buffer layer on silicon.