Nanostructured CrAlN Films Prepared at Different Pulse Widths by Pulsed DC Reactive Sputtering in Facing Target Type System
Nanostructured CrAlN Films Prepared at Different Pulse Widths by Pulsed DC Reactive Sputtering in Facing Target Type System
复制标题
面对靶型系统中脉冲直流反应溅射在不同脉冲宽度下制备纳米结构 CrAlN 薄膜
DOI：
10.2320/matertrans.mer2008249
复制
发表时间：
2008
影响因子：
1.2
通讯作者：
S. Ikeno
中科院分区：
文献类型：
--
作者：
S. Khamseh;M. Nose;Shohei Ueda;T. Kawabata;T. Nagae;K. Matsuda;S. Ikeno
在FTS系统中，采用脉冲直流反应溅射技术，在Ar和N2混合气氛下，用Cr/Al合金（1/450 = 50at%）靶制备了CrAlN薄膜。研究了脉冲宽度对薄膜结构和性能的影响。进行XRD分析以确定膜的相和织构。对选定的薄膜进行了透射电子显微镜研究。为了研究薄膜的力学性能和微观结构之间的关系，通过纳米压痕系统测量硬度。在较低的脉冲宽度下制备的薄膜，表现出fcc-CrN结构。相比之下，在较高的脉冲宽度下制备的薄膜显示出hcp-AlN，hcp-Cr 2N和少量fcc-CrN相的混合结构。膜的塑性硬度Hpl在32至41 GPa之间，而膜的杨氏模量EIT在320至340 GPa之间。增加脉冲宽度也导致膜的内应力增加。此外，随着脉冲宽度的增加，样品的晶粒尺寸减小。结果表明，在较高的脉冲宽度下沉积的薄膜具有较高的硬度（41 GPa），H3：E2比为-0：6，内应力为-3：5GPa。这些结果表明，改变脉冲宽度可以强烈影响CrAlN薄膜的结构和性能，从而在机械和摩擦学性能的良好组合，在适当的条件下，在脉冲直流平衡磁控溅射系统。[doi：10.2320/matertrans. MER 2008249]
CrAlN films have been prepared using a pulsed DC reactive sputtering in FTS system with Cr/Al alloy (¼ 50=50 at%) targets in a mixed atmosphere of Ar and N2. The effects of pulse width on the film structure and properties have been investigated. XRD analyses were carried out to determine the phases and texture of the films. Transmission electron microscopy studies were carried out for selected films. In order to investigate the relationship between the mechanical properties and microstructure of the films, the hardness was measured by a nanoindentation system. Films prepared at lower pulse widths, exhibited fcc-CrN structure. In contrast, films that were prepared at higher pulse widths showed a mixed structure of hcp-AlN, hcp-Cr2N and a small amount of fcc-CrN phases. Plastic hardness, Hpl, of the films ranged between 32 to 41 GPa while the Young’s modulus, EIT, of the films ranged from 320 to 340 GPa. Increasing the pulse width also resulted in an increase in the film’s internal stress. In addition, the grain size of the samples decreased with increasing pulse width. Consequently, the film deposited at higher pulse width exhibited high hardness of 41 GPa, H 3 =E 2 ratio of � 0:6 and relatively lower internal stress of � 3:5 Gpa. These results indicated that changing the pulse width can strongly affect structure and properties of CrAlN films, resulting in a good combination of mechanical and tribological properties, under proper conditions in a pulsed DC Balanced Magnetron Sputtering system. [doi:10.2320/matertrans.MER2008249]