DIFFUSION OF SILICON IN ALUMINUM
DIFFUSION OF SILICON IN ALUMINUM
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DOI：
10.1007/bf02663412
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发表时间：
1978-01-01
期刊：
影响因子：
--
通讯作者：
FUKUSHIMA, Y
中科院分区：
文献类型：
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作者：
FUJIKAWA, SI;HIRANO, KI;FUKUSHIMA, Y
本文用Matano法测定了753 ~ 893 K温度范围内纯铝和Al-Si合金的互扩散系数。由Si在Al中的互扩散系数与浓度的关系外推到Si的摩尔分数为零时，得到Si在Al中的杂质扩散系数与温度的关系式：DSi/Al =（2.02+0.97-0.66× 10- 4 exp [-（136 ±3）kJ mol-1/RT] m ~ 2/s。发现Kirkendall标记向富Si侧移动，表明在Al-Si合金中Si原子比Al原子扩散更快。由互扩散系数和标记位移计算了内禀扩散系数，用渐近振荡势和Le Claire理论估算了Si在Al中杂质扩散和Al自扩散的激活能之差（ΔQ）。ΔQ的计算值与实验值相当一致。根据扩散数据讨论了Si在Al中的空位-溶质结合能。
Interdiffusion coefficients in Al-Si alloys were determined by Matano’s method in the tem-perature range from 753 to 893 K with the couple consisting of pure aluminum and an Al-Si alloy. Temperature dependence of the impurity diffusion coefficients of Si in Al, obtained by extrapolation of the concentration dependence of the interdiffusion coeffi-cient to zero mole fraction of Si, is given by the following equation: DSi/Al = (2.02+0.97-0.66× 10-4exp [-(136 ±3) kJ mol-1/RT] m2/s. p ] The Kirkendall marker was found to move toward the Si-rich side, indicating that the Si atom diffuses faster than the Al atom in Al-Si alloys. From the interdiffusion coeffi-cient and the marker shift, the intrinsic diffusion coefficients were calculated.The difference in the activation energies (ΔQ) between the impurity diffusion of Si in Al and the self-diffusion of Al was estimated by means of the asymptotic oscillating po-tential and the Le Claire theory. The calculated value of ΔQ is in fair agreement with the experimental value. The vacancy-solute binding energy for Si in Al was also dis-cussed based on the diffusion data.