Acoustic field mapping on GaAs using microscopic reflectance and reflectance anisotropy
Acoustic field mapping on GaAs using microscopic reflectance and reflectance anisotropy
复制标题
使用微观反射率和反射率各向异性在 GaAs 上进行声场测绘
DOI：
10.1063/1.123241
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发表时间：
1999
影响因子：
4
通讯作者：
P. Santos
中科院分区：
文献类型：
--
作者：
P. Santos
报道了利用微观反射比和反射各向异性来绘制表面声波(SAW)场的方法。这两种技术是互补的，第二种技术对应变敏感，第一种对应变和声表面波诱导的表面调制都敏感。它们的组合提供了关于SAW粒子位移矢量的纵向和横向分量的信息。
The mapping of surface acoustic wave (SAW) fields by means of microscopic reflectance and reflectance anisotropy in GaAs-based structures is reported. The two techniques are complementary with the second being sensitive to the strain and the first both to the strain and to the surface modulation induced by the SAW. Their combination provides information about both the longitudinal and transverse components of the SAW particle displacement vector.