Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates
Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates
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DOI：
10.1063/1.125716
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发表时间：
2000
影响因子：
4
通讯作者：
Yefan Chen;Soon-Ku Hong;H. Ko;M. Nakajima;T. Yao;Y. Segawa
中科院分区：
文献类型：
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作者：
Yefan Chen;Soon-Ku Hong;H. Ko;M. Nakajima;T. Yao;Y. Segawa
采用等离子体辅助分子束外延技术在MgAl_2O_4（111）衬底上生长ZnO外延层。由H2SO 4和H3 PO 4混合的酸用于衬底蚀刻，其提供具有规则的平台阵列的原子级平坦表面。讨论了衬底对外延过程中ZnO岛的横向生长和合并的影响，以及相应的形貌和结构特性。ZnO外延层与MgAl_2 O_4衬底之间的外延关系为：ZnO[0110]<$MgAl_2 O_4 [112]和ZnO[2110]<$MgAl_2 O_4 [110]。报道了X射线衍射、光致发光和霍尔效应的测量结果，表明采用原子级平坦的MgAl_2 O_4（111）衬底抑制柱状生长可以获得高质量的ZnO外延层。
Plasma-assisted molecular-beam epitaxy of ZnO epilayers on MgAl2O4(111) substrates is described. Acid mixed by H2SO4 and H3PO4 was used for the substrate etching, which provides atomically flat surfaces with a regular terrace array. The influence of the substrate on lateral growth and coalescence of ZnO islands during epitaxy is discussed with corresponding morphological and structural properties. The epitaxial relationship between the ZnO epilayer and MgAl2O4 substrate is determined as: ZnO[0110]∥MgAl2O4[112] and ZnO[2110]∥MgAl2O4[110]. X-ray diffraction, photoluminescence, and Hall-effect measurements are reported, which indicate that high-quality ZnO epilayers are obtained by using atomically flat MgAl2O4(111) substrates to suppress columnar growth.