Aluminium nitride films deposition by reactive triode sputtering for surface acoustic wave device applications
Aluminium nitride films deposition by reactive triode sputtering for surface acoustic wave device applications
复制标题
通过反应三极管溅射沉积氮化铝薄膜，用于表面声波器件应用
DOI：
10.1016/s0257-8972(03)00018-5
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发表时间：
2003
影响因子：
5.4
通讯作者：
M. Djouadi
中科院分区：
文献类型：
--
作者：
V. Mortet;A. Vasin;P. Jouan;O. Elmazria;M. Djouadi
采用反应溅射法制备了AlN薄膜。研究了放电中氮含量对薄膜化学计量比和晶体取向的影响。用傅里叶变换红外光谱、X射线衍射和拉曼光谱对氮化铝薄膜进行了研究。在高沉积速率下，获得了具有高电阻率、高折射率和大光学带隙的致密AlN层。最后，将优化后的薄膜应用于声表面波滤波器的合成。获得的声速对于AlN/Si结构高达5130 ms-1，对于AlN/蓝宝石结构高达5548 ms-1，对于AlN/金刚石结构高达9900 ms-1。
AlN thin films have been deposited by reactive triode sputtering. The effect of the nitrogen contents in the discharge on films stoichiometry and crystal orientation has been investigated. AlN films have been studied by means of Fourier-transform infrared spectroscopy, X-ray diffraction and Raman spectroscopy. Dense AlN layers with very high electrical resistivity, high index of refraction and large optical band gap were obtained at high deposition rates. Finally, the optimized films were applied for the synthesis of surface acoustic waves filters. Acoustic velocities up to 5130 ms−1for AlN/Si structure, 5548 ms−1for AlN/sapphire structure, and 9900 ms−1for AlN/diamond structure were obtained.